With the rapid development of semiconductor technology, silicon carbide (SiC), as a semiconductor material with excellent physical and chemical properties, has shown great application potential in the field of high-performance electronic devices. However, to give full play to the advantages of SiC materials, the preparation of high-quality silicon carbide substrate is a crucial part. This paper aims to discuss the fine preparation process of SiC substrate, through a series of precise process steps to ensure that the final SiC substrate can meet the strict requirements of high-performance electronic devices.
1. Initial treatment: smooth and round
The SiC crystals obtained after the single crystal growth process must first be smoothed to eliminate surface unevenness and growth defects. This step provides a good basis for subsequent processing.
Then a rolling process is carried out to smooth the edge of the crystal anchor, creating favorable conditions for the cutting operation and reducing the risk of breakage during the cutting process.
2. Cutting and thinning
Using precision cutting technology, the SiC crystals are divided into multiple sheets, which will become the raw material for the SiC substrate.
The cut sheet is then ground to be thinned to the desired specification while ensuring the thickness uniformity of the substrate.
3. Surface quality improvement: mechanical polishing and chemical mechanical polishing
Mechanical polishing technology is used to further improve the smoothness of the substrate surface and remove the damaged layer that may occur during grinding.
The chemical mechanical polishing (CMP) process further improves the flatness and cleanliness of the substrate surface, and achieves higher surface quality through the synergistic effect of chemistry and machinery.
4. Cleaning and testing
The polished SiC substrate needs to be thoroughly cleaned to remove the residual polishing liquid and particles on the surface to ensure the cleanliness of the substrate.
Finally, the SiC substrate is tested comprehensively, including surface quality, thickness uniformity, defect density and other key indicators, to ensure that the substrate meets the manufacturing requirements of high-performance electronic devices.
Through the above series of precise process steps, the fine preparation process of SiC substrate can be completed. From the initial grinding and rounding, to the cutting and thinning, to the improvement of the surface quality and the final cleaning and inspection, each step is crucial and together form the complete chain of high-quality SiC substrate preparation. The strict execution and continuous optimization of these process steps provide a solid foundation for the manufacture of high-performance semiconductor devices, and promote the wide application and development of SiC materials in the field of high-performance electronic devices. In the future, with the continuous progress and innovation of technology, the preparation process of SiC substrate will be more perfect, and new vitality will be injected into the sustainable development of semiconductor industry.
