Silicon Carbide Heating Element SiC Heating Rod

Silicon carbide heating element is a high temperature electric heating element, whic is made of high purity green silicon carbide and carbon black through high temperature silicification and recrystallization. Compared with other metal electric heating elements, it has the advantages of acid and alkali corrosion resistance, strong oxidation resistance, large surface load density, fast temperature rise, good thermal shock resistance, small thermal expansion coefficient, high thermal conductivity, high working temperature, long life time, when integrated with automatic electronic control system, not only accurate constant temperature can be obtained, but can also achieve automatic temperature regulation according to the needs of the production process.

Brand:
ATCERA
Item NO.:
AT-THG-BA001

Materials
SiC
Shapes
Rod , Mechanical Parts
Applications
Semiconductor , Petrochemical Industry , Metallurgy Industry

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Properties of Silicon Carbide Heating Element

The silicon carbide heating element has advantages of acid and alkali corrosion resistance, strong oxidation resistance, large surface load density, fast heating, good thermal shock resistance, small thermal expansion coefficient, high thermal conductivity, high service temperature, long life, etc.

1. Acid and alkali corrosion resistance, as well as oxidation resistance;

2. The surface load density is larger than metal electric heating element, and heat conductivity and thermal efficiency are high, temperature rise is fast;

3. Good thermal shock resistance, quick heat and cold resistance, small coefficient of thermal expansion;

4. The use temperature can be to 1600℃ even without protective atmosphere, and the continuous service life can reach more than 2000h.

Applications of SiC Heater Element

As electrical heating component for various kinds of kiln, smelting furnace, vacuum furnace, muffle furnace and other heating equipment, silicon carbide heating element is widely used in metal, electronics, chemical industry, ceramics, glass, semiconductor and other fields, to generate high temperature environment for the production process, thermal analysis, scientific research.

1. Metal industry: heat treatment of various metals, carburizing and nitriding treatment, and sintering of powder metallurgy;

2. Electronics and semiconductor industry: sintering of components such as resistors, capacitors and ceramic substrates, metallization of substrates, optical fiber heat treatment, etc.;

3. Ceramic and glass industry: various ceramic sintering, glass melting and surface treatment, as well as ceramic and glass fiber manufacturing;

4. Chemical industry: sintering of various coating materials and other chemicals, heating of chemical reactants, etc.;

5. Laboratory analysis: testing under high temperature conditions, as well as thermal analysis.

Size Chart for Silicon Carbide Heating Element

We are committed to delivering prime silicon carbide heating elements tailored to your exact specifications. Our dedicated team ensures meticulous adherence to your instructions, striving to exceed customer expectations. Additionally, we offer the flexibility of customized sizes to accommodate your unique requirements.

Drawing, specification requirement and usage scenario information shall be provided if customized design request.

Send Requirements for Custom Design

Machining Tolerance:

1. Diameter ≤50mm: ±0.5mm

2. Diameter 50-100mm: ±1.5mm

3. Diameter 100-300mm: ±3mm

4. Length ≤500mm:±2mm

5. Length 500-2000mm:±3mm

Technical Specification:
Bulk Density	2.5-2.8g/cm³
Porosity	5%-23%
Bending Strength	50-98MPa
Thermal Conductivity	14-21W/m*℃ (at 1000℃)
Coefficient of Thermal Expansion	4.5*10^-6/℃ (at1000℃)
Maximum Working Temperature	1380-1600℃

Drawing of Silicon Carbide Heating Element Single Helical

Silicon Carbide Heating Element Single Helical
Item NO.	OD (mm)	Lenght of Heat zone (mm)	Length of Cold zone (mm)	Overall Length (mm)	Heating Zone (cm²)	Voltage (v)	Power (w)	Range of Resistance(±20%) ( Ω )	SiC’s Purity
AT-THG-BA001	14	200	200	600	87	59	1650	2.11	99%
AT-THG-BA002	14	200	250	700	87	60	1680	2.14	99%
AT-THG-BA003	14	250	200	650	109	71	1990	2.53	99%
AT-THG-BA004	14	250	250	750	109	73	2040	2.61	99%
AT-THG-BA005	14	300	250	800	131	85	2380	3.04	99%
AT-THG-BA006	16	200	250	700	100	58	1970	1.71	99%
AT-THG-BA007	16	250	200	650	125	69	2350	2.03	99%
AT-THG-BA008	16	250	250	750	125	70	2380	2.06	99%
AT-THG-BA009	16	250	300	850	125	71	2410	2.09	99%
AT-THG-BA010	16	300	200	700	150	81	2750	2.39	99%
AT-THG-BA011	16	300	250	800	150	82	2790	2.41	99%
AT-THG-BA012	16	300	300	900	150	83	2820	2.44	99%
AT-THG-BA013	16	350	250	850	175	94	3200	2.76	99%
AT-THG-BA014	16	350	300	950	175	95	3230	2.79	99%
AT-THG-BA015	20	300	400	1100	188	84	3440	2.05	99%
AT-THG-BA016	20	350	400	1150	219	97	3980	2.36	99%
AT-THG-BA017	20	400	400	1200	251	109	4470	2.66	99%
AT-THG-BA018	20	450	400	1250	282	121	4960	2.95	99%
AT-THG-BA019	25	300	400	1100	235	84	4120	1.71	99%
AT-THG-BA020	25	300	500	1300	235	86	4210	1.76	99%
AT-THG-BA021	25	400	400	1200	314	110	5390	2.24	99%
AT-THG-BA022	25	500	400	1300	392	135	6620	2.75	99%
AT-THG-BA023	30	300	400	1100	282	79	4980	1.25	99%
AT-THG-BA024	30	300	500	1300	282	80	5040	1.27	99%
AT-THG-BA025	30	400	400	1200	376	103	6490	1.63	99%
AT-THG-BA026	30	400	500	1400	376	104	6550	1.65	99%
AT-THG-BA027	30	500	400	1300	471	127	8000	2.02	99%
AT-THG-BA028	30	600	400	1400	565	151	9510	2.4	99%
AT-THG-BA029	35	400	400	1200	439	101	7680	1.33	99%
AT-THG-BA030	35	400	500	1400	439	102	7750	1.34	99%
AT-THG-BA031	35	500	400	1300	549	124	9420	1.63	99%
AT-THG-BA032	35	500	500	1500	549	125	9500	1.64	99%
AT-THG-BA033	35	600	400	1400	659	148	11200	1.96	99%
AT-THG-BA034	35	700	400	1500	769	171	13000	2.25	99%
AT-THG-BA035	40	500	400	1300	628	116	10700	1.26	99%
AT-THG-BA036	40	500	500	1500	628	117	10800	1.27	99%
AT-THG-BA037	40	600	400	1400	753	138	12700	1.5	99%
AT-THG-BA038	40	700	400	1500	879	161	14800	1.75	99%
AT-THG-BA039	45	700	450	1600	989	149	16800	1.32	99%
AT-THG-BA040	45	800	400	1600	1130	168	19000	1.49	99%

Drawing of Silicon Carbide Heating Element Double Helical

Silicon Carbide Heating Element Double Helical
Item NO.	OD (mm)	Length of Heat zone (mm)	Length of Cold zone (mm)	Overall Length (mm)	Heating Zone (cm²)	Voltage (v)	Power (w)	Range of Resistance(±20%) ( Ω )	SiC’s Purity
AT-THG-BB001	16	100	150	250	50	61	940	3.96	99%
AT-THG-BB002	16	100	200	300	50	69	1060	4.49	99%
AT-THG-BB003	16	150	150	300	75	84	1290	5.47	99%
AT-THG-BB004	16	150	250	400	75	99	1520	6.45	99%
AT-THG-BB005	16	200	200	400	100	113	1740	7.34	99%
AT-THG-BB006	16	250	200	450	125	135	2080	8.76	99%
AT-THG-BB007	20	100	150	250	62	58	1110	3.03	99%
AT-THG-BB008	20	100	250	350	62	72	1380	3.76	99%
AT-THG-BB009	20	150	200	350	94	87	1670	4.53	99%
AT-THG-BB010	20	200	200	400	125	109	2090	5.68	99%
AT-THG-BB011	20	250	150	400	157	124	2380	6.46	99%
AT-THG-BB012	20	250	250	500	157	138	2650	7.19	99%
AT-THG-BB013	20	300	250	550	188	160	3070	8.34	99%
AT-THG-BB014	25	150	200	350	117	87	2000	3.78	99%
AT-THG-BB015	25	200	200	400	157	110	2530	4.78	99%
AT-THG-BB016	25	200	300	500	157	121	2780	5.27	99%
AT-THG-BB017	25	300	300	600	235	167	3840	7.26	99%
AT-THG-BB018	25	300	400	700	235	179	4120	7.78	99%
AT-THG-BB019	25	350	300	650	274	191	4390	8.31	99%
AT-THG-BB020	25	400	300	700	314	214	4920	9.31	99%
AT-THG-BB021	30	200	200	400	188	190	2790	2.9	99%
AT-THG-BB022	30	250	200	450	235	111	3440	3.58	99%
AT-THG-BB023	30	300	300	600	282	132	4090	4.26	99%
AT-THG-BB024	30	350	350	700	329	153	4740	4.94	99%
AT-THG-BB025	30	400	400	800	376	174	5390	5.62	99%
AT-THG-BB026	30	450	350	800	424	194	6010	6.26	99%
AT-THG-BB027	30	500	300	800	471	214	6630	6.91	99%
AT-THG-BB028	35	200	200	400	219	89	3260	2.43	99%
AT-THG-BB029	35	250	200	450	274	109	3990	2.98	99%
AT-THG-BB030	35	300	300	600	329	130	4760	3.55	99%
AT-THG-BB031	35	400	300	700	439	171	6260	4.67	99%
AT-THG-BB032	35	450	350	800	494	191	6990	5.22	99%
AT-THG-BB033	35	500	300	800	549	211	7720	5.77	99%
AT-THG-BB034	40	200	200	400	251	86	3660	2.02	99%
AT-THG-BB035	40	250	200	450	314	106	4510	2.49	99%
AT-THG-BB036	40	300	300	600	376	127	5400	2.99	99%
AT-THG-BB037	40	350	300	650	439	147	6250	3.46	99%
AT-THG-BB038	40	400	300	700	502	167	7100	3.93	99%
AT-THG-BB039	40	400	400	800	502	167	7100	3.93	99%
AT-THG-BB040	40	450	300	750	565	186	7910	4.37	99%
AT-THG-BB041	40	450	350	800	565	187	7950	4.4	99%
AT-THG-BB042	40	500	300	800	628	206	8760	4.84	99%

Drawing of Silicon Carbide Heating Element Rod

Silicon Carbide Heating Element Rod
Item NO.	OD (mm)	Length of Heat zone (mm)	Length of Cold zone (mm)	Range of Resistance ( Ω )	SiC’s Purity
AT-THG-BC001	14	200	250	1.2-1.3	99%
AT-THG-BC002	14	250	250	1.5-3.0	99%
AT-THG-BC003	14	300	250	1.8-3.5	99%
AT-THG-BC004	14	400	350	2.3-4.7	99%
AT-THG-BC005	14	500	350	2.9-5.9	99%
AT-THG-BC006	16	200	200	0.9-1.9	99%
AT-THG-BC007	16	250	200	1.2-2.4	99%
AT-THG-BC008	16	300	300	1.4-2.8	99%
AT-THG-BC009	18	250	250	0.9-1.8	99%
AT-THG-BC010	18	300	350	1.1-2.2	99%
AT-THG-BC011	18	400	250	1.4-2.9	99%
AT-THG-BC012	18	500	350	1.8-3.6	99%
AT-THG-BC013	20	200	200	0.6-1.2	99%
AT-THG-BC014	20	250	250	0.7-1.4	99%
AT-THG-BC015	20	300	300	0.8-1.6	99%
AT-THG-BC016	20	400	350	1.1-2.2	99%
AT-THG-BC017	20	500	400	1.4-2.8	99%
AT-THG-BC018	20	600	350	1.5-3.0	99%
AT-THG-BC019	25	300	400	0.6-1.3	99%
AT-THG-BC020	25	400	400	0.8-1.7	99%
AT-THG-BC021	25	500	400	1.1-2.2	99%
AT-THG-BC022	25	600	500	1.3-2.6	99%
AT-THG-BC023	25	800	450	1.7-3.4	99%
AT-THG-BC024	25	900	400	1.9-3.8	99%
AT-THG-BC025	25	1000	500	2.2-4.5	99%
AT-THG-BC026	30	400	400	0.5-0.9	99%
AT-THG-BC027	30	500	400	0.6-1.2	99%
AT-THG-BC028	30	1000	500	1.1-2.2	99%
AT-THG-BC029	30	1200	500	1.3-2.6	99%
AT-THG-BC030	30	1300	500	1.4-2.9	99%
AT-THG-BC031	30	1500	250	1.6-3.4	99%
AT-THG-BC032	30	1500	300	1.6-3.4	99%
AT-THG-BC033	30	1500	600	1.6-3.4	99%
AT-THG-BC034	30	2000	650	2.2-4.4	99%
AT-THG-BC035	35	400	400	0.4-0.8	99%
AT-THG-BC036	35	500	400	0.5-1.0	99%
AT-THG-BC037	35	1000	500	1.0-2.0	99%
AT-THG-BC038	35	1200	500	1.1-2.2	99%
AT-THG-BC039	35	1500	500	1.4-2.8	99%
AT-THG-BC040	40	400	400	0.3-0.7	99%
AT-THG-BC041	40	1000	500	0.8-1.7	99%
AT-THG-BC042	40	1500	500	1.3-2.6	99%
AT-THG-BC043	40	2000	650	1.7-3.4	99%
AT-THG-BC044	40	2400	700	2.0-4.0	99%
AT-THG-BC045	40	2600	850	2.2-4.4	99%

Drawing of Silicon Carbide Heating Element Dumbbell

Silicon Carbide Heating Element Dumbbell
Item NO.	Small side OD (mm)	Length of Heat zone (mm)	Length of Cold zone (mm)	Large Side OD (mm)	Range of Resistance ( Ω )	SiC’s Purity
AT-THG-BD001	8	180	60	14	2.6-5.2	99%
AT-THG-BD002	8	180	150	14	2.6-5.2	99%
AT-THG-BD003	8	150	150	14	2.2-4.5	99%
AT-THG-BD004	8	180	180	14	2.6-5.2	99%
AT-THG-BD005	8	200	150	14	2.9-5.8	99%
AT-THG-BD006	12	150	200	20	1.1-2.2	99%
AT-THG-BD007	12	200	200	20	1.4-2.9	99%
AT-THG-BD008	12	250	200	20	1.8-3.8	99%
AT-THG-BD009	14	180	150	22	1.3-2.3	99%
AT-THG-BD010	14	150	250	22	0.9-1.8	99%
AT-THG-BD011	14	200	250	22	1.2-2.3	99%
AT-THG-BD012	14	250	250	22	1.5-3.0	99%
AT-THG-BD013	14	300	250	22	1.8-3.5	99%
AT-THG-BD014	14	400	350	22	2.3-4.7	99%
AT-THG-BD015	18	300	250	28	1.1-2.2	99%
AT-THG-BD016	18	300	350	28	1.1-2.2	99%
AT-THG-BD017	18	400	250	28	1.4-2.9	99%
AT-THG-BD018	18	500	350	28	1.8-3.6	99%
AT-THG-BD019	18	600	350	28	2.1-4.3	99%
AT-THG-BD020	18	400	400	28	1.4-2.9	99%
AT-THG-BD021	25	400	400	38	0.8-1.7	99%
AT-THG-BD022	25	600	500	38	1.3-2.6	99%
AT-THG-BD023	25	800	450	38	1.7-3.4	99%
AT-THG-BD024	25	500	400	45	0.6-1.2	99%
AT-THG-BD025	30	1000	500	45	1.1-2.2	99%
AT-THG-BD026	30	1200	500	45	1.3-2.6	99%
AT-THG-BD027	40	1000	500	56	0.8-1.7	99%
AT-THG-BD028	40	1500	500	56	1.3-2.6	99%
AT-THG-BD029	40	2400	700	56	2.0-4.0	99%
AT-THG-BD030	40	2600	850	56	2.2-4.4	99%

Drawing of Silicon Carbide Heating Element Type W

Silicon Carbide Heating Element Type W
Item NO.	Heat zone OD (mm)	Length of Heat zone (mm)	Length of Cold zone (mm)	Center Distance (mm)	Bridge OD (mm)	Overall length (mm)	SiC’s Purity
AT-THG-BF001	14	200	250	40	14	54	99%
AT-THG-BF002	14	250	300	50	14	64	99%
AT-THG-BF003	14	300	350	60	14	74	99%
AT-THG-BF004	16	200	250	40	16	56	99%
AT-THG-BF005	16	250	300	50	16	66	99%
AT-THG-BF006	16	300	350	60	16	76	99%
AT-THG-BF007	18	300	350	60	18	78	99%
AT-THG-BF008	18	400	400	70	18	88	99%
AT-THG-BF009	18	500	450	75	18	93	99%
AT-THG-BF010	20	250	300	50	20	70	99%
AT-THG-BF011	20	300	350	60	20	80	99%
AT-THG-BF012	20	400	400	70	20	90	99%
AT-THG-BF013	25	400	400	70	25	95	99%
AT-THG-BF014	25	500	450	75	25	100	99%
AT-THG-BF015	25	600	500	80	25	105	99%
AT-THG-BF016	30	600	400	70	30	100	99%
AT-THG-BF017	30	700	450	75	30	105	99%
AT-THG-BF018	30	800	500	80	30	110	99%

Drawing of Silicon Carbide Heating Element Type U

Silicon Carbide Heating Element Type U
Item NO.	Heat zone OD (mm)	Length of Heat zone (mm)	Length of Cold zone (mm)	Center Distance (mm)	Bridge OD (mm)	Overall length (mm)	Range of resistance ( Ω )	SiC’s Purity
AT-THG-BU001	14	200	250	40	14	54	2.4-4.6	99%
AT-THG-BU002	14	250	300	50	14	64	3.0-6.0	99%
AT-THG-BU003	14	300	350	60	14	74	3.6-7.0	99%
AT-THG-BU004	16	200	250	40	16	56	1.4-2.8	99%
AT-THG-BU005	16	250	300	50	16	66	1.8-3.6	99%
AT-THG-BU006	16	300	350	60	16	76	2.0-5.0	99%
AT-THG-BU007	18	300	350	60	18	78	2.0-5.0	99%
AT-THG-BU008	18	400	400	70	18	88	2.8-5.8	99%
AT-THG-BU009	18	500	450	75	18	93	3.6-7.2	99%
AT-THG-BU010	20	250	300	50	20	70	1.8-3.6	99%
AT-THG-BU011	20	300	350	60	20	80	2.0-5.0	99%
AT-THG-BU012	20	400	400	70	20	90	2.8-5.8	99%
AT-THG-BU013	25	400	400	70	25	95	1.6-3.4	99%
AT-THG-BU014	25	500	450	75	25	100	2.2-4.4	99%
AT-THG-BU015	25	600	500	80	25	105	2.6-5.2	99%
AT-THG-BU016	30	600	400	70	30	100	1.4-2.8	99%
AT-THG-BU017	30	700	450	75	30	105	1.6-3.2	99%
AT-THG-BU018	30	800	500	80	30	110	1.8-3.6	99%

Technical Data of Silicon Carbide Materials

Item		Unit	Index Data
Item		Unit	Reaction-sintered SiC (SiSiC)	Silicon Nitride Bonded With SiC (NBSiC)	Sintered SiCn Without Pressure (SSiC)
SiC Content		%	85	80	99
Free Silicon Content		%	15	0	0
Max. Service Temp.		℃	1380	1550	1600
Density		g/cm3	3.02	2.72	3.1
Porosity		%	0	12	0
Bending Strength	20℃	Mpa	250	160	380
Bending Strength	1200℃	Mpa	280	180	400
Modulus of Elasticity	20℃	Gpa	330	220	420
Modulus of Elasticity	1200℃	Gpa	300	/	/
Thermal Conductivity	1200℃	W/m.k	45	15	74
Coefficient of Thermal Expansion		K-1×10-6	4.5	5	4.1
Vickers Hardness	HV	kg/mm2	2500	2500	2800

*This chart illustrates the standard characteristics of the silicon carbide materials commonly employed in the manufacturing of our SiC products and parts. Please be aware that the attributes of customized silicon carbide products and parts may vary depending on the specific processes involved.

Usage Instructions

1. Select appropriate type and parameters of silicon carbide heating elements according to the needs of the application to ensure that the installation size, heating temperature and other requirements are met;

2. During transportation and installation, avoid violent vibration and impact, so as not to break the SiC rod. During installation, the SiC rod should be able to rotate freely, and ensure that the cold end circuit connection is firm and does not fall off;

3. New furnaces or electric furnaces not used for a long time need preheating before use, and old rods or other heat sources is recommended to use;

4. When power on, the initial voltage is controlled at about 50% of the rated operating voltage, and then gradually rises to the rated voltage after stability, reducing the risk of breakage caused by sharp temperature rise of silicon carbide rod;

5. Do not operate in an environment beyond the rated temperature, and avoid contact with high concentration harmful gases during use;

6. Observe whether the reading of ammeter, voltmeter and temperature meter is normal at any time, regularly check whether the cold end fixture is loose, whether the red heat of the silicon carbide rod heating part is uniform, whether there is a phenomenon of oxidation blackening, and timely replace abnormal silicon carbide heating elements;

7. Moisture shall be avoided for silicon carbide rod storage, so as not to decompose or fall off the cold end of the aluminum layer.

Valuable Information

SiC Heater Element Packing

SiC heater elements are carefully packaged in appropriate containers to avoid any potential damage.

Customization Advantages

1. According to your application scenario, analyze the needs, choose the appropriate material and processing plan.

2. Professional team, quick response, can provide solutions and quotations within 24 hours after confirming the demand.

3. Flexible business cooperation mechanism, support at least one piece of quantity customization.

4. Quickly provide samples and test reports to confirm that the product meets your needs.

5. Provide product use and maintenance suggestions to reduce your cost of use.

Ask a Free Quote

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With the rapid development of high-tech industry, the requirements for fineness, purity and consistency of powder materials are increasing. As a key component in the powder preparation process, the performance of grinding medium directly determines the quality of the final product. Traditionally, zirconia ceramic balls are widely used in the field of ultra-fine grinding because of their high bendi...

Application Performance And Advantage Analysis Of Silicon Nitride Ball In Ultrafine Grinding Field

With the rapid development of nanotechnology and ultrafine material science, the demand for high-purity and ultrafine powder is increasing day by day. Silicon nitride ball, with its excellent hardness, very low wear rate and good chemical stability, has gradually become the key grinding medium in the field of ultrafine grinding. The purpose of this paper is to systematically describe the performan...

Study On Performance Characteristics And Application Of Silicon Nitride Ball In Mechanical Engineering Field

With the rapid development of modern mechanical engineering technology, the requirements for material properties are increasingly stringent, especially under extreme conditions such as high temperature, high speed, strong corrosion, etc., traditional metal materials and polymer materials have been difficult to meet the needs. Silicon nitride (Si ₄) As an advanced ceramic material with excellent ov...

Sol-gel Polishing Technology: Challenges And Opportunities To Innovate Silicon Carbide Substrate Polishing

Silicon carbide, the emerging star of the semiconductor material industry, is gradually leading the innovation trend of microelectronics technology with its excellent performance indicators. Its unique thermal conductivity, far superior to traditional semiconductor materials, provides the possibility for efficient heat dissipation, especially in high-power electronic devices show unparalleled adva...

Application And Advantages Of Plasma Assisted Polishing In AlN Substrate Processing

Aluminum nitride (AlN) ceramics, as a material with excellent thermal conductivity, mechanical properties and electrical properties, have been widely used in large-scale integrated circuits and electronic packages in recent years. Its excellent properties make it an ideal cooling substrate and packaging material. However, due to the high hardness, high brittleness and low fracture toughness of alu...

Silicon Carbide Substrate Processing Challenges with Innovative Applications Of Metal Friction-induced Reaction Grinding Technology

In the field of semiconductor materials, silicon carbide (SiC) with its excellent thermal conductivity, wide band gap characteristics, high breakdown electric field strength and high electron mobility, is gradually becoming a research and development hotspot, leading the innovation of a new generation of electronic devices. As a substrate material for key components, the broad application prospect...

Silicon Carbide Pump Shaft SiC Ceramic Shaft

Silicon Carbide Ceramic Rod

Silicon Nitride Ceramic Nozzle

Ceramic Ring for Fiber Laser Cutting Machine

Zirconia Ceramic Mobile Phone Back Cover

Zirconia Ceramic Grading Wheel for Sand Mill

Zirconia Toughened Alumina Ceramic Lining Board

Alumina Ceramic Measuring Platform for Precision Instruments

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