Silicon carbide heating element
Silicon carbide heating element
Silicon carbide heating element
Silicon carbide heating element
Silicon carbide heating element

Silicon Carbide Heating Element SiC Heating Rod

Silicon carbide heating element is a high temperature electric heating element, whic is made of high purity green silicon carbide and carbon black through high temperature silicification and recrystallization. Compared with other metal electric heating elements, it has the advantages of acid and alkali corrosion resistance, strong oxidation resistance, large surface load density, fast temperature rise, good thermal shock resistance, small thermal expansion coefficient, high thermal conductivity, high working temperature, long life time, when integrated with automatic electronic control system, not only accurate constant temperature can be obtained, but can also achieve automatic temperature regulation according to the needs of the production process.

  • Brand:

    ATCERA
  • Item NO.:

    AT-THG-BA001
  • Materials

    SiC
  • Shapes

    Rod , Mechanical Parts
  • Applications

    Semiconductor , Petrochemical Industry , Metallurgy Industry
SiC heating element

Properties of Silicon Carbide Heating Element

 

The silicon carbide heating element has advantages of acid and alkali corrosion resistance, strong oxidation resistance, large surface load density, fast heating, good thermal shock resistance, small thermal expansion coefficient, high thermal conductivity, high service temperature, long life, etc.

 

1. Acid and alkali corrosion resistance, as well as oxidation resistance;

 

2. The surface load density is larger than metal electric heating element, and heat conductivity  and thermal efficiency are high, temperature rise is fast;

 

3. Good thermal shock resistance, quick heat and cold resistance, small coefficient of thermal expansion;

 

4. The use temperature can be to 1600℃ even without protective atmosphere, and the continuous service life can reach more than 2000h.

Applications of SiC Heater Element

Applications of SiC Heater Element

 

As electrical heating component for various kinds of kiln, smelting furnace, vacuum furnace, muffle furnace and other heating equipment, silicon carbide heating element is widely used in metal, electronics, chemical industry, ceramics, glass, semiconductor and other fields, to generate high temperature environment for the production process, thermal analysis, scientific research.

 

1. Metal industry: heat treatment of various metals, carburizing and nitriding treatment, and sintering of powder metallurgy;

 

2. Electronics and semiconductor industry: sintering of components such as resistors, capacitors and ceramic substrates, metallization of substrates, optical fiber heat treatment, etc.;

 

3. Ceramic and glass industry: various ceramic sintering, glass melting and surface treatment, as well as ceramic and glass fiber manufacturing;

4. Chemical industry: sintering of various coating materials and other chemicals, heating of chemical reactants, etc.;

 

5. Laboratory analysis: testing under high temperature conditions, as well as thermal analysis.

 

Size Chart for Silicon Carbide Heating Element

We are committed to delivering prime silicon carbide heating elements tailored to your exact specifications. Our dedicated team ensures meticulous adherence to your instructions, striving to exceed customer expectations. Additionally, we offer the flexibility of customized sizes to accommodate your unique requirements.

 

Drawing, specification requirement and usage scenario information shall be provided if customized design request.

 

 

Machining Tolerance:
1. Diameter ≤50mm: ±0.5mm
2. Diameter 50-100mm: ±1.5mm
3. Diameter 100-300mm: ±3mm
4. Length ≤500mm:±2mm
5. Length 500-2000mm:±3mm

 

Technical Specification:
Bulk Density 2.5-2.8g/cm3
Porosity 5%-23%
Bending Strength 50-98MPa
Thermal Conductivity 14-21W/m*℃ (at 1000℃)
Coefficient of Thermal Expansion 4.5*10-6/℃ (at1000℃)
Maximum Working Temperature 1380-1600℃

 

Drawing of Silicon Carbide Heating Element Single Helical

Silicon Carbide Heating Element Single Helical
Item NO. OD
(mm)
Lenght of
Heat zone
(mm)
Length of
Cold zone
(mm)
Overall Length
(mm)
Heating Zone
(cm²)
Voltage
(v)
Power
(w)
Range of Resistance(±20%)
( Ω )

SiC’s Purity

AT-THG-BA001 14 200 200 600 87 59 1650 2.11 99%
AT-THG-BA002 14 200 250 700 87 60 1680 2.14 99%
AT-THG-BA003 14 250 200 650 109 71 1990 2.53 99%
AT-THG-BA004 14 250 250 750 109 73 2040 2.61 99%
AT-THG-BA005 14 300 250 800 131 85 2380 3.04 99%
AT-THG-BA006 16 200 250 700 100 58 1970 1.71 99%
AT-THG-BA007 16 250 200 650 125 69 2350 2.03 99%
AT-THG-BA008 16 250 250 750 125 70 2380 2.06 99%
AT-THG-BA009 16 250 300 850 125 71 2410 2.09 99%
AT-THG-BA010 16 300 200 700 150 81 2750 2.39 99%
AT-THG-BA011 16 300 250 800 150 82 2790 2.41 99%
AT-THG-BA012 16 300 300 900 150 83 2820 2.44 99%
AT-THG-BA013 16 350 250 850 175 94 3200 2.76 99%
AT-THG-BA014 16 350 300 950 175 95 3230 2.79 99%
AT-THG-BA015 20 300 400 1100 188 84 3440 2.05 99%
AT-THG-BA016 20 350 400 1150 219 97 3980 2.36 99%
AT-THG-BA017 20 400 400 1200 251 109 4470 2.66 99%
AT-THG-BA018 20 450 400 1250 282 121 4960 2.95 99%
AT-THG-BA019 25 300 400 1100 235 84 4120 1.71 99%
AT-THG-BA020 25 300 500 1300 235 86 4210 1.76 99%
AT-THG-BA021 25 400 400 1200 314 110 5390 2.24 99%
AT-THG-BA022 25 500 400 1300 392 135 6620 2.75 99%
AT-THG-BA023 30 300 400 1100 282 79 4980 1.25 99%
AT-THG-BA024 30 300 500 1300 282 80 5040 1.27 99%
AT-THG-BA025 30 400 400 1200 376 103 6490 1.63 99%
AT-THG-BA026 30 400 500 1400 376 104 6550 1.65 99%
AT-THG-BA027 30 500 400 1300 471 127 8000 2.02 99%
AT-THG-BA028 30 600 400 1400 565 151 9510 2.4 99%
AT-THG-BA029 35 400 400 1200 439 101 7680 1.33 99%
AT-THG-BA030 35 400 500 1400 439 102 7750 1.34 99%
AT-THG-BA031 35 500 400 1300 549 124 9420 1.63 99%
AT-THG-BA032 35 500 500 1500 549 125 9500 1.64 99%
AT-THG-BA033 35 600 400 1400 659 148 11200 1.96 99%
AT-THG-BA034 35 700 400 1500 769 171 13000 2.25 99%
AT-THG-BA035 40 500 400 1300 628 116 10700 1.26 99%
AT-THG-BA036 40 500 500 1500 628 117 10800 1.27 99%
AT-THG-BA037 40 600 400 1400 753 138 12700 1.5 99%
AT-THG-BA038 40 700 400 1500 879 161 14800 1.75 99%
AT-THG-BA039 45 700 450 1600 989 149 16800 1.32 99%
AT-THG-BA040 45 800 400 1600 1130 168 19000 1.49 99%

 

Drawing of Silicon Carbide Heating Element Double Helical

Silicon Carbide Heating Element Double Helical
Item NO. OD
(mm)
Length of
Heat zone
(mm)
Length of
Cold zone
(mm)
Overall Length
(mm)
Heating Zone
(cm²)
Voltage
(v)
Power
(w)
Range of Resistance(±20%)
( Ω )
SiC’s Purity
AT-THG-BB001 16 100 150 250 50 61 940 3.96 99%
AT-THG-BB002 16 100 200 300 50 69 1060 4.49 99%
AT-THG-BB003 16 150 150 300 75 84 1290 5.47 99%
AT-THG-BB004 16 150 250 400 75 99 1520 6.45 99%
AT-THG-BB005 16 200 200 400 100 113 1740 7.34 99%
AT-THG-BB006 16 250 200 450 125 135 2080 8.76 99%
AT-THG-BB007 20 100 150 250 62 58 1110 3.03 99%
AT-THG-BB008 20 100 250 350 62 72 1380 3.76 99%
AT-THG-BB009 20 150 200 350 94 87 1670 4.53 99%
AT-THG-BB010 20 200 200 400 125 109 2090 5.68 99%
AT-THG-BB011 20 250 150 400 157 124 2380 6.46 99%
AT-THG-BB012 20 250 250 500 157 138 2650 7.19 99%
AT-THG-BB013 20 300 250 550 188 160 3070 8.34 99%
AT-THG-BB014 25 150 200 350 117 87 2000 3.78 99%
AT-THG-BB015 25 200 200 400 157 110 2530 4.78 99%
AT-THG-BB016 25 200 300 500 157 121 2780 5.27 99%
AT-THG-BB017 25 300 300 600 235 167 3840 7.26 99%
AT-THG-BB018 25 300 400 700 235 179 4120 7.78 99%
AT-THG-BB019 25 350 300 650 274 191 4390 8.31 99%
AT-THG-BB020 25 400 300 700 314 214 4920 9.31 99%
AT-THG-BB021 30 200 200 400 188 190 2790 2.9 99%
AT-THG-BB022 30 250 200 450 235 111 3440 3.58 99%
AT-THG-BB023 30 300 300 600 282 132 4090 4.26 99%
AT-THG-BB024 30 350 350 700 329 153 4740 4.94 99%
AT-THG-BB025 30 400 400 800 376 174 5390 5.62 99%
AT-THG-BB026 30 450 350 800 424 194 6010 6.26 99%
AT-THG-BB027 30 500 300 800 471 214 6630 6.91 99%
AT-THG-BB028 35 200 200 400 219 89 3260 2.43 99%
AT-THG-BB029 35 250 200 450 274 109 3990 2.98 99%
AT-THG-BB030 35 300 300 600 329 130 4760 3.55 99%
AT-THG-BB031 35 400 300 700 439 171 6260 4.67 99%
AT-THG-BB032 35 450 350 800 494 191 6990 5.22 99%
AT-THG-BB033 35 500 300 800 549 211 7720 5.77 99%
AT-THG-BB034 40 200 200 400 251 86 3660 2.02 99%
AT-THG-BB035 40 250 200 450 314 106 4510 2.49 99%
AT-THG-BB036 40 300 300 600 376 127 5400 2.99 99%
AT-THG-BB037 40 350 300 650 439 147 6250 3.46 99%
AT-THG-BB038 40 400 300 700 502 167 7100 3.93 99%
AT-THG-BB039 40 400 400 800 502 167 7100 3.93 99%
AT-THG-BB040 40 450 300 750 565 186 7910 4.37 99%
AT-THG-BB041 40 450 350 800 565 187 7950 4.4 99%
AT-THG-BB042 40 500 300 800 628 206 8760 4.84 99%

 

 

Drawing of Silicon Carbide Heating Element Rod

Silicon Carbide Heating Element Rod
Item NO. OD
(mm)
Length of
Heat zone
(mm)
Length of
Cold zone
(mm)
Range of Resistance
( Ω )
SiC’s Purity
AT-THG-BC001 14 200 250 1.2-1.3 99%
AT-THG-BC002 14 250 250 1.5-3.0 99%
AT-THG-BC003 14 300 250 1.8-3.5 99%
AT-THG-BC004 14 400 350 2.3-4.7 99%
AT-THG-BC005 14 500 350 2.9-5.9 99%
AT-THG-BC006 16 200 200 0.9-1.9 99%
AT-THG-BC007 16 250 200 1.2-2.4 99%
AT-THG-BC008 16 300 300 1.4-2.8 99%
AT-THG-BC009 18 250 250 0.9-1.8 99%
AT-THG-BC010 18 300 350 1.1-2.2 99%
AT-THG-BC011 18 400 250 1.4-2.9 99%
AT-THG-BC012 18 500 350 1.8-3.6 99%
AT-THG-BC013 20 200 200 0.6-1.2 99%
AT-THG-BC014 20 250 250 0.7-1.4 99%
AT-THG-BC015 20 300 300 0.8-1.6 99%
AT-THG-BC016 20 400 350 1.1-2.2 99%
AT-THG-BC017 20 500 400 1.4-2.8 99%
AT-THG-BC018 20 600 350 1.5-3.0 99%
AT-THG-BC019 25 300 400 0.6-1.3 99%
AT-THG-BC020 25 400 400 0.8-1.7 99%
AT-THG-BC021 25 500 400 1.1-2.2 99%
AT-THG-BC022 25 600 500 1.3-2.6 99%
AT-THG-BC023 25 800 450 1.7-3.4 99%
AT-THG-BC024 25 900 400 1.9-3.8 99%
AT-THG-BC025 25 1000 500 2.2-4.5 99%
AT-THG-BC026 30 400 400 0.5-0.9 99%
AT-THG-BC027 30 500 400 0.6-1.2 99%
AT-THG-BC028 30 1000 500 1.1-2.2 99%
AT-THG-BC029 30 1200 500 1.3-2.6 99%
AT-THG-BC030 30 1300 500 1.4-2.9 99%
AT-THG-BC031 30 1500 250 1.6-3.4 99%
AT-THG-BC032 30 1500 300 1.6-3.4 99%
AT-THG-BC033 30 1500 600 1.6-3.4 99%
AT-THG-BC034 30 2000 650 2.2-4.4 99%
AT-THG-BC035 35 400 400 0.4-0.8 99%
AT-THG-BC036 35 500 400 0.5-1.0 99%
AT-THG-BC037 35 1000 500 1.0-2.0 99%
AT-THG-BC038 35 1200 500 1.1-2.2 99%
AT-THG-BC039 35 1500 500 1.4-2.8 99%
AT-THG-BC040 40 400 400 0.3-0.7 99%
AT-THG-BC041 40 1000 500 0.8-1.7 99%
AT-THG-BC042 40 1500 500 1.3-2.6 99%
AT-THG-BC043 40 2000 650 1.7-3.4 99%
AT-THG-BC044 40 2400 700 2.0-4.0 99%
AT-THG-BC045 40 2600 850 2.2-4.4 99%

 

 

Drawing of Silicon Carbide Heating Element Dumbbell

Silicon Carbide Heating Element Dumbbell
Item NO. Small side OD
(mm)
Length of
Heat zone
(mm)
Length of
Cold zone
(mm)
Large Side OD
(mm)
Range of Resistance
( Ω )
SiC’s Purity
AT-THG-BD001 8 180 60 14 2.6-5.2 99%
AT-THG-BD002 8 180 150 14 2.6-5.2 99%
AT-THG-BD003 8 150 150 14 2.2-4.5 99%
AT-THG-BD004 8 180 180 14 2.6-5.2 99%
AT-THG-BD005 8 200 150 14 2.9-5.8 99%
AT-THG-BD006 12 150 200 20 1.1-2.2 99%
AT-THG-BD007 12 200 200 20 1.4-2.9 99%
AT-THG-BD008 12 250 200 20 1.8-3.8 99%
AT-THG-BD009 14 180 150 22 1.3-2.3 99%
AT-THG-BD010 14 150 250 22 0.9-1.8 99%
AT-THG-BD011 14 200 250 22 1.2-2.3 99%
AT-THG-BD012 14 250 250 22 1.5-3.0 99%
AT-THG-BD013 14 300 250 22 1.8-3.5 99%
AT-THG-BD014 14 400 350 22 2.3-4.7 99%
AT-THG-BD015 18 300 250 28 1.1-2.2 99%
AT-THG-BD016 18 300 350 28 1.1-2.2 99%
AT-THG-BD017 18 400 250 28 1.4-2.9 99%
AT-THG-BD018 18 500 350 28 1.8-3.6 99%
AT-THG-BD019 18 600 350 28 2.1-4.3 99%
AT-THG-BD020 18 400 400 28 1.4-2.9 99%
AT-THG-BD021 25 400 400 38 0.8-1.7 99%
AT-THG-BD022 25 600 500 38 1.3-2.6 99%
AT-THG-BD023 25 800 450 38 1.7-3.4 99%
AT-THG-BD024 25 500 400 45 0.6-1.2 99%
AT-THG-BD025 30 1000 500 45 1.1-2.2 99%
AT-THG-BD026 30 1200 500 45 1.3-2.6 99%
AT-THG-BD027 40 1000 500 56 0.8-1.7 99%
AT-THG-BD028 40 1500 500 56 1.3-2.6 99%
AT-THG-BD029 40 2400 700 56 2.0-4.0 99%
AT-THG-BD030 40 2600 850 56 2.2-4.4 99%

 

Drawing of Silicon Carbide Heating Element Type W

Silicon Carbide Heating Element Type W
Item NO. Heat zone OD
(mm)
Length of
Heat zone
(mm)
Length of
Cold zone
(mm)
Center Distance
(mm)
Bridge OD
(mm)
Overall length
(mm)
SiC’s Purity
AT-THG-BF001 14 200 250 40 14 54 99%
AT-THG-BF002 14 250 300 50 14 64 99%
AT-THG-BF003 14 300 350 60 14 74 99%
AT-THG-BF004 16 200 250 40 16 56 99%
AT-THG-BF005 16 250 300 50 16 66 99%
AT-THG-BF006 16 300 350 60 16 76 99%
AT-THG-BF007 18 300 350 60 18 78 99%
AT-THG-BF008 18 400 400 70 18 88 99%
AT-THG-BF009 18 500 450 75 18 93 99%
AT-THG-BF010 20 250 300 50 20 70 99%
AT-THG-BF011 20 300 350 60 20 80 99%
AT-THG-BF012 20 400 400 70 20 90 99%
AT-THG-BF013 25 400 400 70 25 95 99%
AT-THG-BF014 25 500 450 75 25 100 99%
AT-THG-BF015 25 600 500 80 25 105 99%
AT-THG-BF016 30 600 400 70 30 100 99%
AT-THG-BF017 30 700 450 75 30 105 99%
AT-THG-BF018 30 800 500 80 30 110 99%

 

Drawing of Silicon Carbide Heating Element Type U

Silicon Carbide Heating Element Type U
Item NO. Heat zone OD
(mm)
Length of
Heat zone
(mm)
Length of
Cold zone
(mm)
Center Distance
(mm)
Bridge OD
(mm)
Overall length
(mm)
Range of resistance
( Ω )
SiC’s Purity
AT-THG-BU001 14 200 250 40 14 54 2.4-4.6 99%
AT-THG-BU002 14 250 300 50 14 64 3.0-6.0 99%
AT-THG-BU003 14 300 350 60 14 74 3.6-7.0 99%
AT-THG-BU004 16 200 250 40 16 56 1.4-2.8 99%
AT-THG-BU005 16 250 300 50 16 66 1.8-3.6 99%
AT-THG-BU006 16 300 350 60 16 76 2.0-5.0 99%
AT-THG-BU007 18 300 350 60 18 78 2.0-5.0 99%
AT-THG-BU008 18 400 400 70 18 88 2.8-5.8 99%
AT-THG-BU009 18 500 450 75 18 93 3.6-7.2 99%
AT-THG-BU010 20 250 300 50 20 70 1.8-3.6 99%
AT-THG-BU011 20 300 350 60 20 80 2.0-5.0 99%
AT-THG-BU012 20 400 400 70 20 90 2.8-5.8 99%
AT-THG-BU013 25 400 400 70 25 95 1.6-3.4 99%
AT-THG-BU014 25 500 450 75 25 100 2.2-4.4 99%
AT-THG-BU015 25 600 500 80 25 105 2.6-5.2 99%
AT-THG-BU016 30 600 400 70 30 100 1.4-2.8 99%
AT-THG-BU017 30 700 450 75 30 105 1.6-3.2 99%
AT-THG-BU018 30 800 500 80 30 110 1.8-3.6 99%

 

Technical Data of Silicon Carbide Materials

 

Item Unit Index Data
Reaction-sintered SiC
(SiSiC)
Silicon Nitride Bonded With SiC
(NBSiC)
Sintered SiCn Without Pressure
(SSiC)
SiC Content % 85 80 99
Free  Silicon Content % 15 0 0
Max. Service Temp. 1380 1550 1600
Density g/cm3 3.02 2.72 3.1
Porosity % 0 12 0
Bending Strength 20℃ Mpa 250 160 380
1200℃ Mpa 280 180 400
Modulus of Elasticity 20℃ Gpa 330 220 420
1200℃ Gpa 300 / /
Thermal Conductivity 1200℃ W/m.k 45 15 74
Coefficient of Thermal Expansion K-1×10-6 4.5 5 4.1
Vickers Hardness HV kg/mm2 2500 2500 2800

 

*This chart illustrates the standard characteristics of the silicon carbide materials commonly employed in the manufacturing of our SiC products and parts. Please be aware that the attributes of customized silicon carbide products and parts may vary depending on the specific processes involved.

 

Usage Instructions

 
 
 
1. Select appropriate type and parameters of silicon carbide heating elements according to the needs of the application to ensure that the installation size, heating temperature and other requirements are met;
 
2. During transportation and installation, avoid violent vibration and impact, so as not to break the SiC rod. During installation, the SiC rod should be able to rotate freely, and ensure that the cold end circuit connection is firm and does not fall off;
3. New furnaces or electric furnaces not used for a long time need preheating before use, and old rods or other heat sources is recommended to use;
 
4. When power on, the initial voltage is controlled at about 50% of the rated operating voltage, and then gradually rises to the rated voltage after stability, reducing the risk of breakage caused by sharp temperature rise of silicon carbide rod;
 
5. Do not operate in an environment beyond the rated temperature, and avoid contact with high concentration harmful gases during use;
 
6. Observe whether the reading of ammeter, voltmeter and temperature meter is normal at any time, regularly check whether the cold end fixture is loose, whether the red heat of the silicon carbide rod heating part is uniform, whether there is a phenomenon of oxidation blackening, and timely replace abnormal silicon carbide heating elements;
 
7. Moisture shall be avoided for silicon carbide rod storage, so as not to decompose or fall off the cold end of the aluminum layer.
 

Valuable Information

 

SiC Heater Element Packing

SiC Heater Element Packing

 

SiC heater elements are carefully packaged in appropriate containers to avoid any potential damage.

 

Customization Advantages
Customization Advantages

 

 

1. According to your application scenario, analyze the needs, choose the appropriate material and processing plan.

 

2. Professional team, quick response, can provide solutions and quotations within 24 hours after confirming the demand.

 

3. Flexible business cooperation mechanism, support at least one piece of quantity customization.

 

4. Quickly provide samples and test reports to confirm that the product meets your needs.

 

5. Provide product use and maintenance suggestions to reduce your cost of use.

Related Blog
Could Hot Press Sintering Be the Future of High-Performance Transparent Ceramic Production?
As a new inorganic nonmetallic material with high performance and multiple functions, transparent ceramics show great application potential in optics, electronics, aerospace and other fields because of its excellent light transmission, high strength, high hardness and good thermal and chemical stability. Among the many methods to prepare transparent ceramics, hot pressing sintering has become one ...
How Does Vacuum Sintering Technology Facilitate the Preparation of Transparent Ceramics?
As a kind of high performance material, transparent ceramics show great application potential in the fields of optical window, laser medium and high temperature wave transmittance materials because of its unique optical transparency and excellent mechanical properties. Among the many methods of preparing transparent ceramics, vacuum sintering technology has become one of the most widely resea...
What Are The Advantages Of Cold Isostatic Pressing In The Preparation Of Transparent Ceramics?
As a kind of high performance material, transparent ceramics show great application potential in optics, electronics, aerospace and other fields because of its excellent light transmission, high hardness, high temperature resistance and other characteristics. However, the preparation process of transparent ceramics is complicated, and the molding technology is one of the key factors to determine i...
Transparent Ceramics: Basic Principle & Process of Dry Pressing Molding Technology
As a new material with excellent optical properties, transparent ceramics have shown great application potential in optical Windows, laser devices, high temperature sensors and other fields. In the process of its preparation, molding technology is one of the key links, which directly affects the performance and quality of the final product. Among the many molding methods, dry pressing has bec...
How Do Sintering Process Parameters Affect The Properties Of Alumina Substrate?
As a high-performance material, alumina substrate has been widely used in electronics, aerospace and new energy fields. The preparation process involves many complicated processes, in which casting and drying process are the key links to ensure the quality of the substrate. In this article, the effects of raw material formula, casting film thickness and sintering process parameters on th...
What Are Future Trends In Alumina Substrate Preparation Process For Enhanced Performance?
Because of its excellent mechanical properties, thermal stability and chemical inertness, alumina substrate has shown wide application potential in electronic packaging, thermal management and high-performance structural parts. The preparation process involves complex process steps, in which casting process, as the core link, plays a decisive role in the performance of the final product. This...
What Are The Key Factors Influencing Alumina Substrate Performance During Preparation?
In the rapidly developing electronics industry, alumina substrate has become an indispensable substrate for electronic components with its excellent insulation properties, chemical stability, high thermal conductivity and good high-frequency characteristics. It not only provides support for electronic components, but also plays a key role in heat dissipation and insulation. However, the prepa...
Why Is Process Optimization Crucial for High-Quality Alumina Substrate Preparation?
The preparation of alumina substrate is a multi-step process with high precision, in which the choice of solvent directly affects the homogeneity of slurry, drying efficiency and physical properties of the final product. The solvent must not only be able to quickly dissolve each component to form a stable slurry, but also need to have rapid volatilization characteristics to ensure efficient d...
How Do Alumina Powder Characteristics Affect Alumina Substrate Casting Process?
In the field of electronics industry, alumina substrate has become an indispensable base material for electronic components because of its excellent insulation, chemical stability, high thermal conductivity and good high-frequency performance. It not only plays the role of support and heat dissipation, but also ensures the insulation performance of electronic components. Alumina casting slurr...
Technological Advancements To Improve Silicon Carbide Substrate CMP Efficiency
With the continuous progress of semiconductor technology, silicon carbide (SiC), as a high-performance material, has shown great application potential in the field of power electronic devices. However, in the preparation process of silicon carbide substrate, surface quality control is particularly critical, especially after thinning, grinding and polishing and other processes to obtain ultra-...

Related Products

FAQ

Although our primary focus is on advanced ceramic materials such as alumina, zirconia, silicon carbide, silicon nitride, aluminum nitride, and quartz ceramics, we are always exploring new materials and technologies. If you have a specific material requirement, please contact us, and we will do our best to fulfill your needs or find suitable partners.

Absolutely. Our technical team possesses profound knowledge of ceramic materials and extensive experience in product design. We are happy to provide you with material selection advice and product design support to ensure optimal performance for your products.

We do not have a fixed minimum order value requirement. We always focus on meeting our customers' needs, and we strive to provide quality service and products regardless of the order size.

In addition to ceramic products, we also provide a range of additional services, including but not limited to: customized ceramic processing services based on your needs, using blanks or semi-finished blanks produced by yourself; if you are interested in outsourced ceramic packaging and metallization services, please contact us for further discussion. We are always committed to providing you with a one-stop solution to meet your various needs.

Yes, we do. No matter where you are located globally, we can ensure the safe and timely delivery of your order.

Send Your inquiry

Upload
* File ONLY PDF/JPG./PNG. Available.
Submit Now

Contact With Us

Contact With Us
Simply fill out the form below as best you can. And don't sweat the details.
Submit
Looking for Video?
Contact Us #
19311583352

Office Hours

  • Monday to Friday: 9:00 AM - 12:00 PM, 2:00 PM - 5:30 PM

Please note that our office hours are based on Beijing Time, which is eight hours ahead of Greenwich Mean Time (GMT). We appreciate your understanding and cooperation in scheduling your inquiries and meetings accordingly. For any urgent matters or queries outside our regular hours, feel free to contact us via email, and we will get back to you as soon as possible. Thank you for your business, and we look forward to serving you.

Home

Products

whatsApp

contact