Silicon Carbide Wafer SiC wafer

Silicon carbide wafer a new generation of semiconductor materials, can be used to manufacture a variety of electronic devices, such as metal oxide semiconductor field effect transistor (MOSFET), Schottky diode, photodiode, etc.

Brand:
ATCERA
Item NO.:
AT-SIC-JP001N

Materials
SiC
Shapes
Substrate
Applications
Semiconductor

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Properties of Silicon Carbide Wafer

Silicon carbide based electronic component has good heat dissipation, high electrical conductivity, high breakdown electric field strength, large energy gap, good corrosion resistance, can meet the requirements of high power, low loss and high frequency components, and can maintain long-term stable performance in harsh environments.

1. Low energy loss: the switching loss and on-off loss of silicon carbide module are significantly lower than that of conventional IGBT module, and with the increase of switching frequency, the greater the loss difference with IGBT module;

2. Small package size: silicon carbide electronic components size is smaller than the same specification silicon based components, and has less energy loss, so it can provide higher current density;

3. High-frequency switching: electronic saturation drift rate of silicon carbide material is twice as that of silicon, which helps to improve the operating frequency of components;

4. High temperature resistance, good heat dissipation: silicon carbide band gap width and thermal conductivity is about 3 times as that of silicon, so it can withstand higher temperature, the generated heat is easier to release, which favors miniaturization and lightweight of the system.

Applications of SiC wafer

Silicon carbide components can better meet the needs of high temperature, high voltage, high frequency and large power, and it is widely used in electric vehicles, photovoltaic power generation, rail transit, data centers, charging piles and other products and equipment.

1. High-power devices (conductive type): silicon carbide component has high thermal conductivity, high breakdown electric field strength, low energy loss, suitable for the production of high-power devices, such as power modules, drive modules, etc.

2. Radio frequency electronic devices (semi-insulated type): silicon carbide component has high conductivity, can meet the needs of high-frequency work, suitable for RF power amplifiers, microwave devices and high-frequency switches;

3. Photoelectronic devices (semi-insulated type): silicon carbide component has a wide energy gap and high thermal stability, suitable for production of photodiodes, solar cells and laser diodes and other devices;

4. Temperature sensor (conductive type): silicon carbide component has high thermal conductivity and thermal stability, suitable for production of wide working range and high-precision temperature sensor.

Size Chart for Silicon Carbide Wafer

We are committed to delivering optimal silicon carbide wafer tailored to your exact specifications. Our dedicated team ensures meticulous adherence to your instructions, striving to exceed customer expectations. Additionally, we offer the flexibility of customized sizes to accommodate your unique requirements.

Size,material parameter,and processing requirements shall be provided if customized design request.

Send Requirements for Custom Design

Machining Tolerance:

1. Diameter: ±0.25mm

2. Thickness: ±25μm

3. Crystal orientation: <001> ±0.5°

4. Crystal face orientation: ±0.5°

5. Edge orientation: ≤2°

Other parameter please contact ATCERA.

Drawing of Silicon Carbide Wafer Conductive

Silicon Carbide Wafer Conductive
Item NO.	Diameter (inch)	Thickness (mm)
AT-SIC-JP001N	2	0.35
AT-SIC-JP002N	3	0.35
AT-SIC-JP003N	4	0.35
AT-SIC-JP004N	6	0.35
AT-SIC-JP005N	2	0.5
AT-SIC-JP006N	3	0.5
AT-SIC-JP007N	4	0.5
AT-SIC-JP008N	6	0.5

Drawing of SiC Substrate Round

SiC Substrate Round
Item NO.	Diameter (inch)	Thickness (mm)
AT-SIC-CD101	2	2
AT-SIC-CD102	3	3
AT-SIC-CD103	4	4
AT-SIC-CD104	6	2
AT-SIC-CD105	8	3

Technical Data of Silicon Carbide Materials

Item		Unit	Index Data
Item		Unit	Reaction-sintered SiC (SiSiC)	Silicon Nitride Bonded With SiC (NBSiC)	Sintered SiCn Without Pressure (SSiC)
SiC Content		%	85	80	99
Free Silicon Content		%	15	0	0
Max. Service Temp.		℃	1380	1550	1600
Density		g/cm3	3.02	2.72	3.1
Porosity		%	0	12	0
Bending Strength	20℃	Mpa	250	160	380
Bending Strength	1200℃	Mpa	280	180	400
Modulus of Elasticity	20℃	Gpa	330	220	420
Modulus of Elasticity	1200℃	Gpa	300	/	/
Thermal Conductivity	1200℃	W/m.k	45	15	74
Coefficient of Thermal Expansion		K-1×10-6	4.5	5	4.1
Vickers Hardness	HV	kg/mm2	2500	2500	2800

*This chart illustrates the standard characteristics of the silicon carbide materials commonly employed in the manufacturing of our SiC products and parts. Please be aware that the attributes of customized silicon carbide products and parts may vary depending on the specific processes involved.

Clean Methods

Silicon carbide wafers need to be cleaned before use to remove dirt and impurities on the surface.

1. Put the silicon carbide wafer into distilled water, soak for a period of time, and then gently wipe the surface with a soft cloth before taking it out;

2. Put in a chemical cleaning agent, soak for a period of time, and then take it out;

3. Take out the cleaned silicon carbide wafer, rinse the surface with water, then take it out and dry it;

4. In the cleaning process, avoid using too intense mechanical friction or high temperature heating, and ensure that the cleaning environment and tools are clean to avoid pollution.

Valuable Information

SiC Substrate Packing

SiC substrates are carefully packaged in appropriate containers to avoid any potential damage.

Customization Advantages

1. According to your application scenario, analyze the needs, choose the appropriate material and processing plan.

2. Professional team, quick response, can provide solutions and quotations within 24 hours after confirming the demand.

3. Flexible business cooperation mechanism, support at least one piece of quantity customization.

4. Quickly provide samples and test reports to confirm that the product meets your needs.

5. Provide product use and maintenance suggestions to reduce your cost of use.

Ask a Free Quote

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FAQ

Do you supply the materials unlisted on your website?

Although our primary focus is on advanced ceramic materials such as alumina, zirconia, silicon carbide, silicon nitride, aluminum nitride, and quartz ceramics, we are always exploring new materials and technologies. If you have a specific material requirement, please contact us, and we will do our best to fulfill your needs or find suitable partners.

Can you aid in material selection & ceramic product design?

Absolutely. Our technical team possesses profound knowledge of ceramic materials and extensive experience in product design. We are happy to provide you with material selection advice and product design support to ensure optimal performance for your products.

Do you have a minimum order value requirement?

We do not have a fixed minimum order value requirement. We always focus on meeting our customers' needs, and we strive to provide quality service and products regardless of the order size.

What services beyond ceramic products do you offer?

In addition to ceramic products, we also provide a range of additional services, including but not limited to: customized ceramic processing services based on your needs, using blanks or semi-finished blanks produced by yourself; if you are interested in outsourced ceramic packaging and metallization services, please contact us for further discussion. We are always committed to providing you with a one-stop solution to meet your various needs.

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Yes, we do. No matter where you are located globally, we can ensure the safe and timely delivery of your order.

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