Silicon Nitride Substrate
Silicon Nitride Substrate
Silicon Nitride Substrate
Silicon Nitride Substrate
Silicon Nitride Substrate

Silicon Nitride Substrate Si3N4 Substrate Ceramic Substrate

Silicon nitride ceramic substrate is a new generation of semiconductor substrate materials, made of high-purity silicon nitride powder, with excellent thermal conductivity and insulation, high mechanical strength and hardness, small thermal expansion coefficient, good thermal shock resistance performance, widely used in semiconductors and integrated circuits, including power components, inverters, power modules, multi-device integrated circuits, etc.

  • Brand:

    ATCERA
  • Item NO.:

    AT-DHG-JB001
  • Materials

    Si3N4
  • Shapes

    Substrate
  • Applications

    Semiconductor , Electronics and Electricity
Si3N4 Substrate

Properties of Silicon Nitride Substrate

 

1. High temperature resistance, the maximum use temperature can reach 1300℃;

 

 

2. Large thermal conductivity, up to 95W/(℃*m), small thermal expansion coefficient, only 3*10-6/℃, with good thermal shock resistance;

 

 

3. High mechanical strength, good toughness, strong resistance to mechanical impact;

 

 

4. Good electric insulation, high breakdown voltage, large current carrying capacity;

 

 

5. It can resist erosion of various acid, alkali and other chemical substances, corrosion resistance is very good.

Applications of Si3N4 Substrate

Applications of Si3N4 Substrate

 

Silicon nitride ceramic substrate is mainly used in semiconductor, electronics and other microelectronics device manufacturing, as the substrate of chips and electronic components, including integrated circuit (IC), radio frequency (RF) devices, piezoelectric components, photoelectric components, sensors, MEMS and other micro electronic devices. As a high-performance material, silicon nitride ceramic substrate can provide a stable support platform to ensure normal operation and performance of the components.

 

 

1. Electronic Industry Applications

Silicon nitride ceramic substrate has high insulation performance and excellent high temperature resistance, can meet the high reliability and high performance requirements of electronic components, mainly used in the manufacture of electronic components, such as electronic capacitors, resistors, magnetic components and so on. In addition, it can also be used to manufacture the medium layer of high-speed communication equipment to ensure the stable transmission of high-frequency signals.

 

2. Photoelectric Industry

Silicon nitride ceramic substrates can provide good thermal performance and mechanical strength, and are widely used in the photoelectric industry, especially in the manufacture of high-power leds, ensuring the stability and life of LED components. In addition, it can also be used to manufacture support materials for solar panels to enhance their mechanical strength and chemical resistance.

 

3. Electrical Industry

Silicon nitride ceramic substrate has excellent insulation performance and good heat dissipation, and can be used to manufacture various high-power electrical components, such as power modules, heating modules, etc., effectively ensuring the service life and reliability of electrical equipment.

Size Chart of Si3N4 Substrate

We are committed to delivering optimal silicon nitride ceramic substrate tailored to your exact specifications. Our dedicated team ensures meticulous adherence to your instructions, striving to exceed customer expectations. Additionally, we offer the flexibility of customized sizes to accommodate your unique requirements.

 

Drawing and specification requirement shall be provided if customized design request.

 

Machining Tolerance:
1. Diameter: ±0.003mm
2. Hole Depth: ±0.005mm
3. Surfance Roughness:Ra0.02
4. Cylindricity: ±0.002mm
5. Concentricity: ±0.002mm
6. Parallelism: ±0.002mm

 

 

 

Drawing of Si3N4 Substrate Square and Rectangular

Si3N4 Substrate Square and Rectangular
Item No. Length
(mm)
Width
(mm)
Thickness
(mm)
AT-DHG-JB001 10 10 0.32
AT-DHG-JB002 20 20 0.32
AT-DHG-JB003 30 30 4.0 
AT-DHG-JB004 40 40 0.5
AT-DHG-JB005 50 50 0.32
AT-DHG-JB006 50 50 0.635
AT-DHG-JB007 50 50 1.0 
AT-DHG-JB008 50 50 2.0 
AT-DHG-JB009 50 50 4.0 
AT-DHG-JB010 50 50 9.0 
AT-DHG-JB011 100 100 0.3 
AT-DHG-JB012 100 100 0.5 
AT-DHG-JB013 100 100 0.6 
AT-DHG-JB014 100 100 1.0 
AT-DHG-JB015 100 100 4.0 
AT-DHG-JB016 100 100 9.0 
AT-DHG-JB017 114 114 0.3 
AT-DHG-JB018 114 114 0.5 
AT-DHG-JB019 114 114 0.6 
AT-DHG-JB020 114 114 1.0 
AT-DHG-JB021 190 138 0.3 
AT-DHG-JB022 190 138 0.5 
AT-DHG-JB023 190 138 0.6 
AT-DHG-JB024 190 138 1.0 

 

Drawing of Si3N4 Substrate Round

Si3N4 Substrate Round
Item No. Diameter
(mm)
Thickness
(mm)
AT-DHG-JB025 5 0.25
AT-DHG-JB026 5 0.32
AT-DHG-JB027 5 0.625
AT-DHG-JB028 5 1
AT-DHG-JB029 10 0.25
AT-DHG-JB030 10 0.32
AT-DHG-JB031 10 0.625
AT-DHG-JB032 10 1
AT-DHG-JB033 20 0.25
AT-DHG-JB034 20 0.32
AT-DHG-JB035 20 0.625
AT-DHG-JB036 20 1
AT-DHG-JB037 40 0.25
AT-DHG-JB038 40 0.32
AT-DHG-JB039 40 0.625
AT-DHG-JB040 40 1
AT-DHG-JB041 50 0.25
AT-DHG-JB042 50 0.32
AT-DHG-JB043 50 0.625
AT-DHG-JB044 50 1
AT-DHG-JB045 100 0.32
AT-DHG-JB046 100 1
AT-DHG-JB047 100 2
AT-DHG-JB048 150 0.32
AT-DHG-JB049 150 1
AT-DHG-JB050 150 2
AT-DHG-JB051 150 20

 

Technical Data of Silicon Nitride Materials

Si3N4 Type Gas pressure sintering Si3N4 Hot pressing sintering Si3N4
Density (g/cm3) 3.2 3.3
Flexture strength (MPa) 700 900
Young Modulus (GPa) 300 300
Poisson's ratio 0.25 0.28
Compressive strength (MPa) 2500 3000
Hardness (GPa) 15 16
Fracture toughness (MPa*m1/2) 5~7 6~8
Maximum working temperature (℃) 1100 1300
Thermal conductivity (W/m*K) 20 25
Thermal expansion coefficient (/℃) 3*10-6 3.1*10-6
Thermal shock resistance (ΔT ℃) 550 800

 

*This chart illustrates the standard characteristics of the silicon nitride materials commonly employed in the manufacturing of our Si3N4 products and parts. Please be aware that the attributes of customized silicon nitride products  and parts may vary depending on the specific processes involved. Detailed parameter is decided by type and composition of stabilizing agent.

 

Usage Instructions

 
 
 
1. Collision and impact during use shall be to avoid damage;
 
 
2. Working temperature of silicon nitride ceramic substrate shall be strictly controlled, long time over temperature working shall be avoided;
 
 
3. Silicon nitride ceramic substrate has good corrosion resistance to acid, alkali, salt and other chemicals, but contact with hydrofluoric acid shall be avoided;
 
 
4. The surface of silicon nitride ceramic substrate is easy to be contaminated with dust and dirt, which may affect its performance and service life, therefore it shall be regularly cleaned during use to keep its surface clean and shiny.
 

Valuable Information

 

Si3N4 Substrate Packing

Si3N4 Substrate Packing

 

 

Silicon nitride ceramic substrates are carefully packaged in appropriate containers to avoid any potential damage.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Customization Advantages
Customization Advantages

 

 

1. According to your application scenario, analyze the needs, choose the appropriate material and processing plan.

 

2. Professional team, quick response, can provide solutions and quotations within 24 hours after confirming the demand.

 

3. Flexible business cooperation mechanism, support at least one piece of quantity customization.

 

4. Quickly provide samples and test reports to confirm that the product meets your needs.

 

5. Provide product use and maintenance suggestions to reduce your cost of use.

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Although our primary focus is on advanced ceramic materials such as alumina, zirconia, silicon carbide, silicon nitride, aluminum nitride, and quartz ceramics, we are always exploring new materials and technologies. If you have a specific material requirement, please contact us, and we will do our best to fulfill your needs or find suitable partners.

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