Silicon carbide tray
Silicon carbide tray
Silicon carbide tray
Silicon carbide tray
Silicon carbide tray

Silicon Carbide Tray SiC RTA PVD ICP CMP Tray

Silicon carbide tray is formed from high purity silicon carbide powder after sintering, as a carrying device used in semiconductor manufacturing process, such as RTA(Rapid Thermal Annealing), PVD(Physical vapor Deposition), ICP(Inductively Coupled Plasma), CMP(chemical mechanical polish) and so on.

  • Brand:

    ATCERA
  • Item NO.:

    AT-THG-CZ1001
  • Materials

    SiC
  • Shapes

    Plate
  • Applications

    Semiconductor
Silicon carbide tray

Properties of Silicon Carbide Tray

 

1. Excellent thermal conductivity, low thermal expansion coefficient, good thermal shock resistance;

 

2. High temperature resistance, plasma impact resistance;

 

3. Resistant to various strong acid, alkali and chemical reagents;

 

4. High hardness, high strength, good wear resistance.

 

 

 

 

 

 

 

 

 

 

Applications of SiC Tray

Applications of SiC Tray

 

Silicon carbide tray is used as carrying plate in semiconductor (including LED) manufacturing process.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Size Chart for Silicon Carbide Tray

We are committed to delivering prime silicon carbide tray tailored to your exact specifications. Our dedicated team ensures meticulous adherence to your instructions, striving to exceed customer expectations. Additionally, we offer the flexibility of customized sizes to accommodate your unique requirements.

 

Drawing and parameter requirements shall be provided if customized design request. (maximum size up to 500*500mm and diameter up to 500mm)

Machining Tolerance:
Diameter  ±0.25mm
Thickness  ±25μm
Crystal Orientation  <001> ±0.5°
Crystal Face Orientation  ±0.5°
Edge Orientation  ≤2°
Other parameter please contact ATCERA.

 

Dimension Tolerance: 
Diameter: ±0.1mm
Thickness: ±0.05mm
Flatness: 0.003mm

 

 

 

Drawing of Silicon Carbide Tray SiC PVD Tray

Silicon Carbide Tray SiC PVD Tray
Item NO. Diameter
(mm)
Thickness
(mm)
SiC's Purity
(%)
AT-THG-CZ1001 230 3 99
AT-THG-CZ1002 300 1.4 99
AT-THG-CZ1003 300 3 99
AT-THG-CZ1004 330 1.4 99
AT-THG-CZ1005 330 3 99

 

 

Drawing of Silicon Carbide Tray SiC ICP Tray

Silicon Carbide Tray SiC ICP Tray
Item NO. Diameter
(mm)
Thickness
(mm)
SiC's Purity
(%)
AT-THG-CZ2001 300 3 99
AT-THG-CZ2002 300 4.4 99
AT-THG-CZ2003 330 4.4 99
AT-THG-CZ2004 330 3 99
AT-THG-CZ2005 380 4.4 99
AT-THG-CZ2006 380 3 99

 

Technical Data of Silicon Carbide Materials

 

Item Unit Index Data
Reaction-sintered SiC
(SiSiC)
Silicon Nitride Bonded With SiC
(NBSiC)
Sintered SiCn Without Pressure
(SSiC)
SiC Content % 85 80 99
Free  Silicon Content % 15 0 0
Max. Service Temp. 1380 1550 1600
Density g/cm3 3.02 2.72 3.1
Porosity % 0 12 0
Bending Strength 20℃ Mpa 250 160 380
1200℃ Mpa 280 180 400
Modulus of Elasticity 20℃ Gpa 330 220 420
1200℃ Gpa 300 / /
Thermal Conductivity 1200℃ W/m.k 45 15 74
Coefficient of Thermal Expansion K-1×10-6 4.5 5 4.1
Vickers Hardness HV kg/mm2 2500 2500 2800

 

*This chart illustrates the standard characteristics of the silicon carbide materials commonly employed in the manufacturing of our SiC products and parts. Please be aware that the attributes of customized silicon carbide products and parts may vary depending on the specific processes involved.

 

Usage Instructions

 
 
 
1. Cleaning treatment
Before storage, it is necessary to clean the silicon carbide tray to remove surface impurities and pollutants. You can use a special cleaning agent or alcohol to clean and dry with a dust-free cloth;
 
2. Drying treatment
The cleaned silicon carbide tray should be dried to remove residual moisture. The tray can be naturally dried in a low humidity environment or dried using a dryer;
 
3. Storage environment
The silicon carbide tray should be stored in a dry, clean and dust-free environment to avoid moisture, pollution and dust;
 
4. Shockproof and anti-fall
In the process of preservation and transportation, the tray should be avoided from severe vibration or falling to prevent it from being damaged or affecting the accuracy;
 
5. Regular inspection
The status of the silicon carbide tray should be regularly checked, including appearance, accuracy and stability, etc., to ensure that it is in good condition before use.
 

Valuable Information

 

SiC Tray Packing

SiC Tray Packing

 

Silicon carbide trays are carefully packaged in appropriate containers to avoid any potential damage.

 

 

 

 

 

 

 

 

 

 

 

Customization Advantages
Customization Advantages

 

 

1. According to your application scenario, analyze the needs, choose the appropriate material and processing plan.

 

2. Professional team, quick response, can provide solutions and quotations within 24 hours after confirming the demand.

 

3. Flexible business cooperation mechanism, support at least one piece of quantity customization.

 

4. Quickly provide samples and test reports to confirm that the product meets your needs.

 

5. Provide product use and maintenance suggestions to reduce your cost of use.

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Although our primary focus is on advanced ceramic materials such as alumina, zirconia, silicon carbide, silicon nitride, aluminum nitride, and quartz ceramics, we are always exploring new materials and technologies. If you have a specific material requirement, please contact us, and we will do our best to fulfill your needs or find suitable partners.

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In addition to ceramic products, we also provide a range of additional services, including but not limited to: customized ceramic processing services based on your needs, using blanks or semi-finished blanks produced by yourself; if you are interested in outsourced ceramic packaging and metallization services, please contact us for further discussion. We are always committed to providing you with a one-stop solution to meet your various needs.

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